Our Electron Beam Inspection (EBI) equipment adopts a large-current high-brightness electron gun design and aberration dynamic correction techniques, providing large-field-view, high-speed imaging, and various advanced charge control methods. It can be used for defect detection of pattern wafers at advanced process – especially for morphology and material defects at the bottom of high aspect ratio structures, as well as the detection of connectivity-related electrical defects underneath the surface layer. It is an indispensable tool for yield control and R&D for advanced processes, and therefore will further strengthening domestic development of advanced process.

　　Highlights：Following to the latest practices and technical trend in SEM column and e-beam tool design, SIS EBI tool offers, comparing to the domestic made competing products, 4x increasement in field of view; 10x improvement in scan rate; nano-level imaging position accuracy; multiple means of charging control and modulation techniques.